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AUIRF1018E

Manufacturer

Infineon

Description

Automotive Q101 60V Single N-Channel HEXFET Power MOSFET in a TO-220AB Package

Datasheet

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Product Attributes

Type

Case/Package

Continuous Drain Current (ID)

Drain to Source Breakdown Voltage

Drain to Source Resistance

Drain to Source Voltage (Vdss)

Element Configuration

Gate to Source Voltage (Vgs)

Height

Input Capacitance

Length

Max Junction Temperature (Tj)

Max Operating Temperature

Max Power Dissipation

Min Operating Temperature

Mount

Number of Channels

Number of Elements

Number of Pins

Power Dissipation

Radiation Hardening

Rds On Max

RoHS

Turn-Off Delay Time

Turn-On Delay Time

Width

Description

TO-220AB

79 A

60 V

7.1 mΩ

60 V

Single

20 V

20.57 mm

2.29 nF

10.67 mm

175 °C

175 °C

110 W

-55 °C

Through Hole

1

1

3

110 W

No

8.4 mΩ

Compliant

55 ns

13 ns

4.83 mm

358.68

In Stock


Quantity
Shipment
delivery

Ships in 7-10 days

Quantity

Unit Price

Ext. Price

1

358.68

358.68

10

233.05

2330.51

25

233.03

5825.81

Product Attributes

Type

Case/Package

Continuous Drain Current (ID)

Drain to Source Breakdown Voltage

Drain to Source Resistance

Drain to Source Voltage (Vdss)

Element Configuration

Gate to Source Voltage (Vgs)

Height

Input Capacitance

Length

Max Junction Temperature (Tj)

Max Operating Temperature

Max Power Dissipation

Min Operating Temperature

Mount

Number of Channels

Number of Elements

Number of Pins

Power Dissipation

Radiation Hardening

Rds On Max

RoHS

Turn-Off Delay Time

Turn-On Delay Time

Width

Description

TO-220AB

79 A

60 V

7.1 mΩ

60 V

Single

20 V

20.57 mm

2.29 nF

10.67 mm

175 °C

175 °C

110 W

-55 °C

Through Hole

1

1

3

110 W

No

8.4 mΩ

Compliant

55 ns

13 ns

4.83 mm

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