


Manufacturer
Infineon
Description
Automotive Q101 60V Single N-Channel HEXFET Power MOSFET in a TO-220AB Package
Datasheet
Type
Case/Package
Continuous Drain Current (ID)
Drain to Source Breakdown Voltage
Drain to Source Resistance
Drain to Source Voltage (Vdss)
Element Configuration
Gate to Source Voltage (Vgs)
Height
Input Capacitance
Length
Max Junction Temperature (Tj)
Max Operating Temperature
Max Power Dissipation
Min Operating Temperature
Mount
Number of Channels
Number of Elements
Number of Pins
Power Dissipation
Radiation Hardening
Rds On Max
RoHS
Turn-Off Delay Time
Turn-On Delay Time
Width
Description
TO-220AB
79 A
60 V
7.1 mΩ
60 V
Single
20 V
20.57 mm
2.29 nF
10.67 mm
175 °C
175 °C
110 W
-55 °C
Through Hole
1
1
3
110 W
No
8.4 mΩ
Compliant
55 ns
13 ns
4.83 mm
₹358.68
Ships in 7-10 days
Quantity
Unit Price
Ext. Price
1
₹358.68
₹358.68
10
₹233.05
₹2330.51
25
₹233.03
₹5825.81
Type
Case/Package
Continuous Drain Current (ID)
Drain to Source Breakdown Voltage
Drain to Source Resistance
Drain to Source Voltage (Vdss)
Element Configuration
Gate to Source Voltage (Vgs)
Height
Input Capacitance
Length
Max Junction Temperature (Tj)
Max Operating Temperature
Max Power Dissipation
Min Operating Temperature
Mount
Number of Channels
Number of Elements
Number of Pins
Power Dissipation
Radiation Hardening
Rds On Max
RoHS
Turn-Off Delay Time
Turn-On Delay Time
Width
Description
TO-220AB
79 A
60 V
7.1 mΩ
60 V
Single
20 V
20.57 mm
2.29 nF
10.67 mm
175 °C
175 °C
110 W
-55 °C
Through Hole
1
1
3
110 W
No
8.4 mΩ
Compliant
55 ns
13 ns
4.83 mm

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