SIRA06DP-T1-GE3
Manufacturer
Vishay
Description
MOSFET, N-CH, 30V, PPAK-SO8; Transistor Polarity: N Channel; Continuous Drain Cur
Datasheet
DownloadProduct Attributes
Type
Case/Package
Contact Plating
Continuous Drain Current (ID)
Drain to Source Breakdown Voltage
Drain to Source Voltage (Vdss)
Element Configuration
Fall Time
Gate to Source Voltage (Vgs)
Height
Input Capacitance
Lead Free
Length
Max Operating Temperature
Max Power Dissipation
Min Operating Temperature
Mount
Number of Channels
Number of Elements
Number of Pins
Power Dissipation
Radiation Hardening
Rds On Max
REACH SVHC
Resistance
RoHS
Threshold Voltage
Turn-Off Delay Time
Turn-On Delay Time
Weight
Width
Description
SOIC
Tin
40 A
30 V
30 V
Single
20 ns
20 V
1.12 mm
3.595 nF
Lead Free
6.25 mm
150 °C
62.5 W
-55 °C
Surface Mount
1
1
8
5 W
No
2.5 mΩ
Unknown
2.5 mΩ
Compliant
1.1 V
30 ns
24 ns
506.605978 mg
5.26 mm
₹107.06
In Stock
Ships in 7-10 days
Quantity
Unit Price
Ext. Price
1
₹107.06
₹107.06
10
₹83.08
₹830.82
25
₹83.06
₹2076.59
50
₹83.08
₹4154.10
100
₹73.49
₹7349.28
500
₹62.66
₹31332.35
1000
₹57.93
₹57926.82
Product Attributes
Type
Case/Package
Contact Plating
Continuous Drain Current (ID)
Drain to Source Breakdown Voltage
Drain to Source Voltage (Vdss)
Element Configuration
Fall Time
Gate to Source Voltage (Vgs)
Height
Input Capacitance
Lead Free
Length
Max Operating Temperature
Max Power Dissipation
Min Operating Temperature
Mount
Number of Channels
Number of Elements
Number of Pins
Power Dissipation
Radiation Hardening
Rds On Max
REACH SVHC
Resistance
RoHS
Threshold Voltage
Turn-Off Delay Time
Turn-On Delay Time
Weight
Width
Description
SOIC
Tin
40 A
30 V
30 V
Single
20 ns
20 V
1.12 mm
3.595 nF
Lead Free
6.25 mm
150 °C
62.5 W
-55 °C
Surface Mount
1
1
8
5 W
No
2.5 mΩ
Unknown
2.5 mΩ
Compliant
1.1 V
30 ns
24 ns
506.605978 mg
5.26 mm
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